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HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM
Features
x x x
IDT7008S/L
x
x
True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access - Military: 25/35/55ns (max.) - Industrial: 55ns (max.) - Commercial: 20/25/35/55ns (max.) Low-power operation - IDT7008S Active: 750mW (typ.) Standby: 5mW (typ.) - IDT7008L Active: 750mW (typ.) Standby: 1mW (typ.) Dual chip enables allow for depth expansion without external logic
x
x x x
x x x x
IDT7008 easily expands data bus width to 16 bits or more using the Master/Slave select when cascading more than one device M/S = VIH for BUSY output flag on Master, M/S = VIL for BUSY input on Slave Interrupt Flag On-chip port arbitration logic Full on-chip hardware support of semaphore signaling between ports Fully asynchronous operation from either port TTL-compatible, single 5V (10%) power supply Available in 84-pin PGA, 84-pin PLCC, and a 100-pin TQFP Industrial temperature range (-40C to +85C) is available for selected speeds
Functional Block Diagram
R/WL CE0L CE1L OEL R/WR CE0R CE1R OER
I/O0-7L
I/O Control
I/O Control
I/O0-7R
BUSYL A15L A0L
(1,2)
BUSY R 64Kx8 MEMORY ARRAY 7008
16 16
(1,2)
Address Decoder
Address Decoder
A15R A0R
CE0L CE1L OEL R/W L SEML (2) INTL
ARBITRATION INTERRUPT SEMAPHORE LOGIC
CE0R CE1R OER R/WR SEMR (2) INTR
3198 drw 01
M/S
(1)
NOTES: 1. BUSY is an input as a Slave (M/S = VIL) and an output when it is a Master (M/S = VIH). 2. BUSY and INT are non-tri-state totem-pole outputs (push-pull).
MAY 2000
DSC 3198/6
1
(c)2000 Integrated Device Technology, Inc.
IDT7008S/L High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Description
The IDT7008 is a high-speed 64K x 8 Dual-Port Static RAM. The IDT7008 is designed to be used as a stand-alone 512K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more word systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 16-bit or wider memory system applications results in full-speed, errorfree operation without the need for additional discrete logic. This device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by the chip enables (CE0 and CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT's CMOS high-performance technology, these devices typically operate on only 750mW of power. The IDT7008 is packaged in a 84-pin Ceramic Pin Grid Array (PGA), a 84-pin Plastic Leadless Chip Carrier (PLCC) and a 100-pin Thin Quad Flatpack (TQFP).
Pin Configurations(1,2,3)
A7R A8R A9R A10R A11R A12R A13R A14R A15R NC GND NC NC CE0R CE1R SEMR R/WR OER GND
11 10 9 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 IDT7008J J84-1(4) 84-Pin PLCC Top View(5) 87 65 43 INDEX
A6R A5R A4R A3R A2R A1R A0R INTR BUSYR M/S GND BUSYL INTL NC A0L A1L A2L A3L A4L A5L A6L
2 1 84 83 82 81 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56
GND NC
NC I/O7R I/O6R I/O5R I/O4R I/O3R Vcc I/O2R I/O1R I/O0R GND Vcc I/O0L I/O1L GND I/O2L I/O3L I/O4L I/O5L I/O6L I/O7L ,
3198 drw 02
55 31 54 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53
NOTES: 1. This text does not indicate orientation of the actual part marking. 2. All Vcc pins must be connected to power supply. 3. Package body is approximately 1.15 in x 1.15 in x .17 in. 4. This package code is used to reference the package diagram. 5. All GND pins must be connected to ground supply.
A7L A8L A9L A10L A11L A12L A13L A14L A15L NC Vcc NC NC CE0L CE1L SEML RIWL OEL GND
2
GND NC
IDT7008S/L High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Pin Configurations(1,2,3) (con't.)
Index
NC NC A7L A8L A9L A10L A11L A12L A13L A14L A15L NC Vcc NC NC NC NC CE0L CE1L SEML R/WL OEL GND NC NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 1 75 2 74 3 73 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 72 71 70 69 68 67
NC NC A6L A5L A4L A3L A2L A1L A0L NC INTL BUSYL GND M/S BUSYR INTR A0R A1R A2R A3R A4R A5R A6R NC NC
IDT7008PF PN100-1(4) 100-Pin TQFP Top View(5)
66 65 64 63 62 61 60 59 58 57 56 55 54 53
52 51 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
NC NC A7R A8R A9R A10R A11R A12R A13R A14R A15R NC GND NC NC NC NC CE0R CE1R SEMR R/WR OER GND GND NC ,
3198 drw 03
NOTES: 1. This text does not indicate orientation of the actual part marking. 2. All Vcc pins must be connected to power supply. 3. Package body is approximately 14mm x 14mm x 1.4mm. 4. This package code is used to reference the package diagram. 5. All GND pins must be connected to ground supply.
GND NC I/O7L I/O6L I/O5L I/O4L I/O3L I/O2L GND I/O1L I/O0L Vcc GND I/O0R I/O1R I/O2R Vcc I/O3R I/O4R I/O5R I/O6R I/O7R NC NC NC
3 6.42
IDT7008S/L High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Pin Configurations(1,2,3) (con't)
63 61 60 58 55 54 51 48 46 45 42
11
66
A7R
64
A9R
A10R
62
A12R
59
A15R
56 49
NC
50
NC
SEMR
47
OER
44
GND
43 40
NC
10
67
A4R
65
A6R
A8R
A11R
A14R
57
CE1R
53
CE0R
52
R/WR
GND
41
NC
I/O6R
39
09
69
A3R
68
A5R
A13R
GND
NC
I/O7R
38
I/O5R
37
08
72
A1R
71
A2R
73 33
I/O4R
35
I/O3R
34
07
BUSYR
75
INTR
70
M/S
74
I/O0R IDT7008G G84-3(4) 84-Pin PGA Top View(5)
32
I/O2R
31
I/O1R
36
06 BUSYL
76
A0R
77
GND
78
GND
28 29
Vcc
30
Vcc
05 04
INTL
79 80
NC
A0L
GND
I/O1L
26
I/O0L
27
A1L
81 83
A2L
7 11 12
I/O3L
23
I/O2L
25
03
82
A3L
1
A5L
2 5 8
A13L
10
Vcc
14
NC
17 20
I/O6L
22
I/O4L
24
02
84
A4L
3
A7L
4
A8L
6
A11L
9
A14L
15
NC
CE0L
13
R/WL
16
GND
18
I/O7L
19
I/O5L
21
01
A6L A
A9L B
A10L C
A12L D
A15L E
CE1L F
NC G
SEML H
OEL J
GND K
NC L
,
3198 drw 04
INDEX
NOTES: 1. All Vcc pins must be connected to power supply. 2. All GND pins must be connected to ground supply. 3. Package body is approximately 1.12 in x 1.12 in x .16 in. 4. This package code is used to reference the package diagram. 5. This text does not indicate orientation of the actual part marking.
Pin Names
Left Port CE0L, CE1L R/WL OEL A0L - A15L I/O0L - I/O7L SEML INTL BUSYL Right Port CE0R, CE1R R/WR OER A0R - A15R I/O0R - I/O7R SEMR INTR BUSYR M/S VCC GND Names Chip Enables Read/Write Enable Output Enable Address Data Input/Output Semaphore Enable Interrupt Flag Busy Flag Master or Slave Select Power Ground
3198 tbl 01
4
IDT7008S/L High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Truth Table I: Chip Enable(1)
CE CE0 VIL L < 0.2V VIH X H >VCC -0.2V X CE1 VIH >VCC -0.2V X VIL X <0.2V Port Selected (TTL Active) Port Selected (CMOS Active) Port Deselected (TTL Inactive) Port Deselected (TTL Inactive) Port Deselected (CMOS Inactive) Port Deselected (CMOS Inactive)
3198 tbl 02
Mode
NOTES: 1. Chip Enable references are shown above with the actual CE0 and CE1 levels, CE is a reference only.
Truth Table II: Non-Contention Read/Write Control
Inputs(1) CE
(2)
Outputs SEM H H H X I/O0-7 High-Z DATAIN DATAOUT High-Z Deselected: Power-Down Write to memory Read memory Outputs Disabled
3198 tbl 03
R/W X L H X
OE X X L H
Mode
H L L X
NOTES: 1. A0L - A15L A0R - A15R. 2. Refer to Chip Enable Truth Table.
Truth Table III: Semaphore Read/Write Control(1)
Inputs CE
(2)
Outputs SEM L L L I/O0-7 DATAOUT DATAIN
______
R/W H
OE L X X
Mode Read Semaphore Flag Data Out Write I/O0 into Semaphore Flag Not Allowed
3198 tbl 04
H H L
X
NOTES: 1. There are eight semaphore flags written to via I/O0 and read from all the I/Os (I/O0-I/O7). These eight semaphore flags are addressed by A0-A2. 2. Refer to Chip Enable Truth Table.
5 6.42
IDT7008S/L High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings(1)
Symbol VTERM(2) Rating Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature DC Output Current Commercial & Industrial -0.5 to +7.0 Military -0.5 to +7.0 Unit V
Recommended DC Operating Conditions
Symbol VCC Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Min. 4.5 0 2.2 -0.5(1) Typ. 5.0 0
____
Max. 5.5 0 6.0
(2)
Unit V V V V
3198 tbl 07
TBIAS TSTG IOUT
-55 to +125 -65 to +150 50
-65 to +135 -65 to +150 50
o
C C
GND VIH
o
VIL
____
0.8
mA
3198 tbl 05
NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%.
NOTES: 1. VIL > -1.5V for pulse width less than 10ns. 2. VTERM must not exceed Vcc + 10%.
Capacitance
S ym b o l CN I
(TA = +25C, f = 1.0mhz) (TQFP Only)
P aram eter(1) Input Capacitance Output Capacitance Condi ti ons(2) VIN = 3dV VOUT = 3dV M ax. 9 10 Uni t pF pF
3198 tbl 08
Maximum Operating Temperature and Supply Voltage(1,2)
Grade Military Commercial Industrial Ambient Temperature -55 C to+125 C 0OC to +70OC -40OC to +85OC
O O
COUT
GND 0V 0V 0V
Vcc 5.0V + 10% 5.0V + 10% 5.0V + 10%
3198 tbl 06
NOTES: 1. This parameter is determined by device characterization but is not production tested. 2. 3dV represents the interpolated capacitance when the input and output signals switch from 0V to 3V or from 3V to 0V.
NOTES: 1. This is the parameter TA. This is the "instant on" case tempreature. 2. Industrial Temperature: for other speeds, packages and powers contact your sales office.
DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(2) (VCC = 5.0V 10%)
7008S Symbol |ILI| |ILO| VOL VOH Parameter Input Leakage Current(1) Output Leakage Current Output Low Voltage Output High Voltage Test Conditions VCC = 5.5V, VIN = 0V to VCC CE = VIH, VOUT = 0V to VCC IOL = 4mA IOH = -4mA Min.
___
7008L Max. 10 10 0.4
___
Min.
___
Max. 5 5 0.4
___
Unit A A V V
3198 tbl 09
___
___
___
___
2.4
2.4
NOTES: 1. At Vcc < 2.0V, input leakages are undefined. 2. Refer to Chip Enable Truth Table.
6
IDT7008S/L High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1,6,7) (VCC = 5.0V 10%)
7008X20 Com'l Only Symbol ICC Parameter Dynamic Operating Current (Both Ports Active) Test Condition CE = VIL, Outputs Disabled SEM = VIH f = fMAX (3) Version COM'L MIL & IND COM'L MIL & IND COM'L MIL & IND COM'L MIL & IND COM'L MIL & IND S L S L S L S L S L S L S L S L S L S L Typ.(2) 190 180
___ ___
7008X25 Com'l & Military Typ.(2) 180 170 170 170 40 40 40 40 105 105 105 105 1.0 0.2 1.0 0.2 100 100 100 100 Max. 305 265 345 305 85 60 100 80 200 170 230 200 15 5 30 10 170 145 200 175
3198 tbl 10a
Max. 325 285
___ ___
Unit mA
ISB1
Standby Current (Both Ports - TTL Level Inputs)
CEL = CER = VIH SEMR = SEML = VIH f = fMAX (3)
50 50
___ ___
90 70
___ ___
mA
ISB2
Standby Current (One Port - TTL Level Inputs)
CE"A" = VIL and CE"B" = VIH(5) Active Port Outputs Disabled, f=fMAX (3) SEMR = SEML = VIH Both Ports CEL and CER > VCC - 0.2V VIN > VCC - 0.2V or VIN < 0.2V, f = 0(4) SEMR = SEML > VCC - 0.2V CE"A" < 0.2V and CE"B" > VCC - 0.2V(5) SEMR = SEML > VCC - 0.2V VIN > VCC - 0.2V or VIN < 0.2V Active Port Outputs Disabled f = fMAX (3)
115 115
___ ___
215 185
___ ___
mA
ISB3
Full Standby Current (Both Ports - All CMOS Level Inputs)
1.0 0.2
___ ___
15 5
___ ___
mA
ISB4
Full Standby Current (One Port - All CMOS Level Inputs)
110 110
___ ___
190 160
___ ___
mA
7008X35 Com'l & Military Symbol ICC Parameter Dynamic Operating Current (Both Ports Active) Test Condition CE = VIL, Outputs Disabled SEM = VIH f = fMAX (3) Version COM'L MIL & IND COM'L MIL & IND ISB2 Standby Current (One Port - TTL Level Inputs) CE"A" = VIL and CE"B" = VIH(5) Active Port Outputs Disabled, f=fMAX (3) SEMR = SEML = VIH Both Ports CEL and CER > VCC - 0.2V VIN > VCC - 0.2V or VIN < 0.2V, f = 0(4) SEMR = SEML > VCC - 0.2V CE"A" < 0.2V and CE"B" > VCC - 0.2V(5) SEMR = SEML > VCC - 0.2V VIN > VCC - 0.2V or VIN < 0.2V Active Port Outputs Disabled f = fMAX (3) COM'L MIL & IND COM'L MIL & IND COM'L MIL & IND S L S L S L S L S L S L S L S L S L S L Typ.(2) 160 160 160 160 30 30 20 20 95 95 95 95 1.0 0.2 1.0 0.2 90 90 90 90 Max. 295 255 335 295 85 60 100 80 185 155 215 185 15 5 30 10 160 135 190 165
7008X55 Com'l, Ind & Military Typ.(2) 150 150 150 150 20 20 13 13 85 85 85 85 1.0 0.2 1.0 0.2 80 80 80 80 Max. 270 230 310 270 85 60 100 80 165 135 195 165 15 5 30 10 135 110 175 150
3198 tbl 10b
Unit mA
ISB1
Standby Current (Both Ports - TTL Level Inputs)
CEL = CER = VIH SEMR = SEML = VIH
mA
mA
ISB3
Full Standby Current (Both Ports - All CMOS Level Inputs)
mA
ISB4
Full Standby Current (One Port - All CMOS Level Inputs)
mA
NOTES: 1. 'X' in part numbers indicates power rating (S or L) 2. VCC = 5V, TA = +25C, and are not production tested. ICCDC = 120mA (Typ.) 3. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/ tRC, and using "AC Test Conditions" of input levels of GND to 3V. 4. f = 0 means no address or control lines change. 5. Port "A" may be either left or right port. Port "B" is the opposite from port "A". 6. Refer to Chip Enable Truth Table. 7. Industrial Temperature: for other speeds, packages and powers contact your sales office.
7 6.42
IDT7008S/L High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
5V 5V 893 DATAOUT BUSY INT DATAOUT 347 30pF 347 5pF* 893
AC Test Conditions
Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load GND to 3.0V 5ns Max. 1.5V 1.5V Figures 1 and 2
3198 tbl 11
3198 drw 05
3198 drw 06
Figure 1. AC Output Test Load
Figure 2. Output Test Load (for tLZ, tHZ, tWZ, tOW) * Including scope and jig.
Waveform of Read Cycles(5)
tRC ADDR tAA (4) tACE tAOE OE
(4) (4)
CE(6)
R/W tLZ DATAOUT
(1)
tOH VALID DATA
(4) (2)
tHZ BUSYOUT tBDD
(3,4)
3198 drw 07
Timing of Power-Up Power-Down
CE ICC ISB
3198 drw 08 (6)
tPU
tPD
,
NOTES: 1. Timing depends on which signal is asserted last, OE or CE. 2. Timing depends on which signal is de-asserted first CE or OE. 3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relation to valid output data. 4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA or tBDD. 5. SEM = VIH. 6. Refer to Chip Enable Truth Table.
8
IDT7008S/L High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(6,7)
7008X20 Com'l Only Symbol READ CYCLE tRC tAA tACE tAOE tOH tLZ tHZ tPU tPD tSOP tSAA Read Cycle Time Address Access Time Chip Enable Access Time
(4)
7008X25 Com'l & Military Min. Max.
7008X35 Com'l & Military Min. Max.
7008X55 Com'l, Ind & Military Min. Max. Unit
Parameter
Min.
Max.
20
____
____
25
____
____
35
____
____
55
____
____
ns ns ns ns ns ns ns ns ns ns ns
3198 tbl 12
20 20 12
____
25 25 13
____
35 35 20
____
55 55 30
____
____
____
____
____
Output Enable Access Time Output Hold from Address Change Output Low-Z Time
(1,2)
____
____
____
____
3 3
____
3 3
____
3 3
____
3 3
____
____
____
____
____
Output High-Z Time (1,2) Chip Enab le to Power Up Time
(2) (2)
12
____
15
____
15
____
25
____
0
____
0
____
0
____
0
____
Chip Disable to Power Down Time
20
____
25
____
35
____
50
____
Semaphore Flag Update Pulse (OE or SEM) Semaphore Address Access Time
10
____
12
____
15
____
15
____
20
25
35
55
AC Electrical Characteristics Over the Operating Temperature and Supply Voltage(6,7)
7008X20 Com'l Only Symbol WRITE CYCLE tWC tEW tAW tAS tWP tWR tDW tHZ tDH tWZ tOW tSWRD tSPS Write Cycle Time Chip Enable to End-of-Write (3) Address Valid to End-of-Write Address Set-up Time Write Pulse Width Write Recovery Time Data Valid to End-of-Write Output High-Z Time Data Hold Time
(5) (1,2) (1,2) (3)
7008X25 Com'l & Military Min. Max.
7008X35 Com'l & Military Min. Max.
7008X55 Com'l, Ind & Military Min. Max. Unit
Parameter
Min.
Max.
20 15 15 0 15 0 15
____
____
25 20 20 0 20 0 15
____
____
35 30 30 0 25 0 15
____
____
55 45 45 0 40 0 30
____
____
ns ns ns ns ns ns ns ns ns ns ns ns ns
3198 tbl 13
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
12
____
15
____
15
____
25
____
0
____
0
____
0
____
0
____
Write Enable to Output in High-Z Output Active from End-of-Write SEM Flag Write to Read Time SEM Flag Contention Window
12
____
15
____
15
____
25
____
(1,2,5)
0 5 5
0 5 5
0 5 5
0 5 5
____
____
____
____
____
____
____
____
NOTES: 1. Transition is measured 0mV from Low- or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranted by device characterization, but is not production tested. 3. To access RAM, CE= VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. 4. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE= VIH and SEM = VIL. 5. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW. 6. 'X' in part numbers indicates power rating (s or L). 7. Industrial Temperature: for other speeds, packages and powers contact your sales office.
9 6.42
IDT7008S/L High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Write Cycle No. 1, R/W Controlled Timing(1,5,8)
tWC ADDRESS tHZ (7) OE tAW CE or SEM
(9,10)
tAS(6) R/W tWZ (7) DATAOUT
(4)
tWP (2)
tWR
(3)
tOW
(4)
tDW DATAIN
tDH
3198 drw 09
Timing Waveform of Write Cycle No. 2, CE Controlled Timing(1,5)
tWC ADDRESS tAW CE or SEM(9,10) tAS R/W tDW DATAIN
3198 drw 10 (6)
tEW (2)
tWR
(3)
tDH
NOTES: 1. R/W or CE must be HIGH during all address transitions. 2. A write occurs during the overlap (tEW or tWP) of a LOW CE and a LOW R/W for memory array writing cycle. 3. tWR is measured from the earlier of CE or R/W (or SEM or R/W) going HIGH to the end of write cycle. 4. During this period, the I/O pins are in the output state and input signals must not be applied. 5. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state. 6. Timing depends on which enable signal is asserted last, CE or R/W. 7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load (Figure 2). 8. If OE is LOW during R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP. 9. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. tEW must be met for either condition. 10. Refer to Chip Enable Truth Table.
10
IDT7008S/L High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Semaphore Read after Write Timing, Either Side(1)
tSAA A0-A2 VALID ADDRESS tAW SEM tEW tDW DATA0 tAS R/W tSWRD OE
Write Cycle
tOH
VALID ADDRESS tACE
tWR
tSOP DATAOUT VALID(2)
DATAIN VALID tWP tDH
tAOE tSOP
Read Cycle
3198 drw 11
NOTES: 1. CE = VIH for the duration of the above timing (both write and read cycle) (Refer to Chip Enable Truth Table). 2. "DATAOUT VALID" represents all I/O's (I/O0 - I/O15) equal to the semaphore value.
Timing Waveform of Semaphore Write Contention(1,3,4)
A0"A"-A2"A" MATCH
SIDE
(2)
"A"
R/W"A"
SEM"A" tSPS A0"B"-A2"B" MATCH
SIDE
(2)
"B"
R/W"B"
SEM"B"
3198 drw 12
NOTES: 1. DOR = DOL = VIL, CEL = CER = VIH (Refer to Chip Enable Truth Table). 2. All timing is the same for left and right ports. Port "A" may be either left or right port. "B" is the opposite from port "A". 3. This parameter is measured from R/W"A" or SEM"A" going HIGH to R/W"B" or SEM"B" going HIGH. 4. If tSPS is not satisfied, the semaphore will fall positively to one side or the other, but there is no guarantee which side will obtain the flag.
11 6.42
IDT7008S/L High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(6,7)
7008X20 Com'l Only Symbol BUSY TIMING (M/S=VIH) tBAA tBDA tBAC tBDC tAPS tBDD tWH BUSY Access Time from Address Match BUSY Disable Time from Address Not Matched BUSY Access Time from Chip Enable Low BUSY Access Time from Chip Enable High Arbitration Priority Set-up Time (2) BUSY Disable to Valid Data Write Hold After BUSY(5)
(3)
____
7008X25 Com'l & Military Min. Max.
7008X35 Com'l & Military Min. Max.
7008X55 Com'l, Ind & Military Min. Max. Unit
Parameter
Min.
Max.
20 20 20 17
____
____
20 20 20 17
____
____
20 20 20 20
____
____
45 40 40 35
____
ns ns ns ns ns ns ns
____
____
____
____
____
____
____
____
____
____
____
____
5
____
5
____
5
____
5
____
20
____
25
____
35
____
55
____
15
17
25
25
BUSY TIMING (M/S=VIL) tWB tWH BUSY Input to Write (4) Write Hold After BUSY
(5)
0 15
____
0 17
____
0 25
____
0 25
____
ns ns
____
____
____
____
PORT-TO-PORT DELAY TIMING tWDD tDDD Write Pulse to Data Delay (1) Write Data Valid to Read Data Delay
(1)
____
45 30
____
50 35
____
60 45
____
80 65
ns ns
3198 tbl 14
____
____
____
____
NOTES: 1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Write with Port-to-Port Read and BUSY (M/S = VIH)". 2. To ensure that the earlier of the two ports wins. 3. tBDD is a calculated parameter and is the greater of 0, tWDD - tWP (actual) or tDDD - tDW (actual). 4. To ensure that the write cycle is inhibited on port "B" during contention on port "A". 5. To ensure that a write cycle is completed on port "B" after contention on port "A". 6. 'X' in part numbers indicates power rating (S or L). 7. Industrial Temperature: for other speeds, packages and powers contact your sales office.
12
IDT7008S/L High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Port-to-Port Read and BUSY(2,5) (M/S = VIH)(4)
tWC ADDR"A" MATCH tWP R/W"A" tDW DATAIN "A" tAPS ADDR"B"
(1)
tDH VALID
MATCH tBDA tBDD
BUSY"B" tWDD DATAOUT "B" tDDD
(3) 3198 drw 13
VALID
NOTES: 1. To ensure that the earlier of the two ports wins. tAPS is ignored for M/S = VIL (SLAVE). 2. CEL = CER = VIL, refer to Chip Enable Truth Table. 3. OE = VIL for the reading port. 4. If M/S = VIL (SLAVE), then BUSY is an input (BUSY"A" = VIH and BUSY"B" = "don't care", for this example). 5. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from port "A".
Timing Waveform of Write with BUSY (M/S = VIL)
tWP R/W"A" tWB(3) BUSY"B" tWH (1)
R/W"B"
(2)
3198 drw 14
NOTES: 1. tWH must be met for both BUSY input (SLAVE) and output (MASTER). 2. BUSY is asserted on port "B" blocking R/W"B", until BUSY"B" goes HIGH. 3. tWB is only for the 'Slave' version.
13 6.42
IDT7008S/L High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Waveform of BUSY Arbitration Controlled by CE Timing(1,3) (M/S = VIH)
ADDR"A" and "B" ADDRESSES MATCH
CE"A" tAPS CE"B" tBAC BUSY"B"
3198 drw 15 (2)
tBDC
Waveform of BUSY Arbitration Cycle Controlled by Address Match Timing(1) (M/S = VIH)
ADDR"A" tAPS (2) ADDR"B" MATCHING ADDRESS "N" tBAA BUSY"B" tBDA
3198 drw 16
ADDRESS "N"
NOTES: 1. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from port "A". 2. If tAPS is not satisfied, the BUSY signal will be asserted on one side or another but there is no guarantee on which side BUSY will be asserted. 3. Refer to Chip Enable Truth Table.
AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1,2)
7008X20 Com'l Only Symbol INTERRUPT TIMING tAS tWR tINS tINR Address Set-up Time Write Recovery Time Interrupt Set Time Interrupt Reset Time 0 0
____ ____
7008X25 Com'l & Military Min. Max.
7008X35 Com'l & Military Min. Max.
7008X55 Com'l, Ind & Military Min. Max. Unit
Parameter
Min.
Max.
0 0
____
____
0 0
____
____
0 0
____
____
ns ns ns ns
3198 tbl 15
____
____
____
____
20 20
20 20
25 25
40 40
____
____
____
____
NOTES: 1. 'X' in part numbers indicates power rating (S or L). 2. Industrial Temperature: for other speeds, packages and powers contact your sales office.
14
IDT7008S/L High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Waveform of Interrupt Timing(1,5)
tWC ADDR"A" tAS CE"A"
(3)
INTERRUPT SET ADDRESS
(2) (4)
tWR
R/W"A" tINS INT"B"
3198 drw 17 (3)
tRC ADDR"B" INTERRUPT CLEAR ADDRESS tAS(3) CE"B"
(2)
OE"B" tINR (3) INT"B"
3198 drw 18
NOTES: 1. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from port "A". 2. See Interrupt Truth Table. 3. Timing depends on which enable signal (CE or R/W) is asserted last. 4. Timing depends on which enable signal (CE or R/W) is de-asserted first. 5. Refer to Chip Enable Truth Table.
Truth Table IV Interrupt Flag(1,4,5)
Left Port R/WL L X X X CE L X X L OEL X X X L A15L-A0L FFFF X X FFFE INTL X X L
(3) (2)
Right Port R/WR X X L X CE X L L X OER X L X X A15R-A0R X FFFF FFFE X INTR L
(2) (3)
Function Set Right INTR Flag Reset Right INTR Flag Set Left INTL Flag Reset Left INTL Flag
3198 tbl 16
H
X X
H
NOTES: 1. Assumes BUSYL = BUSYR =VIH. 2. If BUSYL = VIL, then no change. 3. If BUSYR = VIL, then no change. 4. INTL and INTR must be initialized at power-up. 5. Refer to Chip Enable Truth Table.
15 6.42
IDT7008S/L High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Truth Table V Address BUSY Arbitration(4)
Inputs CEL X H X L CER X X H L AOL-A15L AOR-A15R NO MATCH MATCH MATCH MATCH Outputs BUSYL(1) H H H (2) BUSYR(1) H H H (2) Function Normal Normal Normal Write Inhibit(3)
3198 tbl 17
NOTES: 1. Pins BUSYL and BUSYR are both outputs when the part is configured as a master. Both are inputs when configured as a slave. BUSY outputs on the IDT7008 are push-pull, not open drain outputs. On slaves the BUSY input internally inhibits writes. 2. "L" if the inputs to the opposite port were stable prior to the address and enable inputs of this port. "H" if the inputs to the opposite port became stable after the address and enable inputs of this port. If tAPS is not met, either BUSYL or BUSYR = LOW will result. BUSYL and BUSYR outputs can not be LOW simultaneously. 3. Writes to the left port are internally ignored when BUSYL outputs are driving LOW regardless of actual logic level on the pin. Writes to the right port are internally ignored when BUSYR outputs are driving LOW regardless of actual logic level on the pin. 4. Refer to Chip Enable Truth Table.
Truth Table VI Example of Semaphore Procurement Sequence(1,2,3)
Functions No Action Left Port Writes "0" to Semaphore Right Port Writes "0" to Semaphore Left Port Writes "1" to Semaphore Left Port Writes "0" to Semaphore Right Port Writes "1" to Semaphore Left Port Writes "1" to Semaphore Right Port Writes "0" to Semaphore Right Port Writes "1" to Semaphore Left Port Writes "0" to Semaphore Left Port Writes "1" to Semaphore D0 - D7 Left 1 0 0 1 1 0 1 1 1 0 1 D0 - D7 Right 1 1 1 0 0 1 1 0 1 1 1 Semaphore free Left port has semaphore token No change. Right side has no write access to semaphore Right port obtains semaphore token No change. Left port has no write access to semaphore Left port obtains semaphore token Semaphore free Right port has semaphore token Semaphore free Left port has semaphore token Semaphore free
3198 tbl 18
Status
NOTES: 1. This table denotes a sequence of events for only one of the eight semaphores on the IDT7008. 2. There are eight semaphore flags written to via I/O0 and read from all I/O's (I/O0-I/O7). These eight semaphores are addressed by A0-A2. 3. CE = VIH, SEM = VIL to access the semaphores. Refer to the Semaphore Read/Write Control Truth Table.
Functional Description
The IDT7008 provides two ports with separate control, address and I/O pins that permit independent access for reads or writes to any location in memory. The IDT7008 has an automatic power down feature controlled by CE. The CE0 and CE1 control the on-chip power down circuitry that permits the respective port to go into a standby mode when not selected (CE HIGH). When a port is enabled, access to the entire memory array is permitted. (INTL) is asserted when the right port writes to memory location FFFE (HEX), where a write is defined as CER = R/WR = VIL per the Truth Table. The left port clears the interrupt through access of address location FFFE when CEL = OEL = VIL, R/W is a "don't care". Likewise, the right port interrupt flag (INTR) is asserted when the left port writes to memory location FFFF (HEX) and to clear the interrupt flag (INTR), the right port must read the memory location FFFF. The message (8 bits) at FFFE or FFFF is userdefined since it is an addressable SRAM location. If the interrupt function is not used, address locations FFFE and FFFF are not used as mail boxes, but as part of the random access memory. Refer to Table IV for the interrupt operation.
16
Interrupts
If the user chooses the interrupt function, a memory location (mail box or message center) is assigned to each port. The left port interrupt flag
IDT7008S/L High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Busy Logic
Busy Logic provides a hardware indication that both ports of the RAM have accessed the same location at the same time. It also allows one of the two accesses to proceed and signals the other side that the RAM is "busy". The BUSY pin can then be used to stall the access until the operation on the other side is completed. If a write operation has been attempted from the side that receives a BUSY indication, the write signal is gated internally to prevent the write from proceeding. The use of BUSY logic is not required or desirable for all applications. In some cases it may be useful to logically OR the BUSY outputs together and use any BUSY indication as an interrupt source to flag the event of an illegal or illogical operation. If the write inhibit function of BUSY logic is not desirable, the BUSY logic can be disabled by placing the part in slave mode with the M/S pin. Once in slave mode the BUSY pin operates solely as a write inhibit input pin. Normal operation can be programmed by tying the BUSY pins HIGH. If desired, unintended write operations can be prevented to a port by tying the BUSY pin for that port LOW. The BUSY outputs on the IDT7008 RAM in master mode, are pushpull type outputs and do not require pull up resistors to operate. If these RAMs are being expanded in depth, then the BUSY indication for the resulting array requires the use of an external AND gate.
A16 CE0 MASTER Dual Port RAM BUSY (L) BUSY (R) CE0 SLAVE Dual Port RAM BUSY (L) BUSY (R)
result in a glitched internal write inhibit signal and corrupted data in the slave.
Semaphores
The IDT7008 is an extremely fast Dual-Port 64K x 8 CMOS Static RAM with an additional 8 address locations dedicated to binary semaphore flags. These flags allow either processor on the left or right side of the Dual-Port RAM to claim a privilege over the other processor for functions defined by the system designer's software. As an example, the semaphore can be used by one processor to inhibit the other from accessing a portion of the Dual-Port RAM or any other shared resource. The Dual-Port RAM features a fast access time, and both ports are completely independent of each other. This means that the activity on the left port in no way slows the access time of the right port. Both ports are identical in function to standard CMOS Static RAM and can be read from, or written to, at the same time with the only possible conflict arising from the simultaneous writing of, or a simultaneous READ/WRITE of, a nonsemaphore location. Semaphores are protected against such ambiguous situations and may be used by the system program to avoid any conflicts in the non-semaphore portion of the Dual-Port RAM. These devices have an automatic power-down feature controlled by CE, the Dual-Port RAM enable, and SEM, the semaphore enable. The CE and SEM pins control on-chip power down circuitry that permits the respective port to go into standby mode when not selected. This is the condition which is shown in Truth Table II where CE and SEM are both HIGH. Systems which can best use the IDT7008 contain multiple processors or controllers and are typically very high-speed systems which are software controlled or software intensive. These systems can benefit from a per-formance increase offered by the IDT7008s hardware semaphores, which provide a lockout mechanism without requiring complex programming. Software handshaking between processors offers the maximum in system flexibility by permitting shared resources to be allocated in varying configurations. The IDT7008 does not use its semaphore flags to control any resources through hardware, thus allowing the system designer total flexibility in system architecture. An advantage of using semaphores rather than the more common methods of hardware arbitration is that wait states are never incurred in either processor. This can prove to be a major advantage in very highspeed systems.
CE1 MASTER Dual Port RAM BUSY (L) BUSY (R)
CE1 SLAVE Dual Port RAM BUSY (L) BUSY (R)
, 3198 drw 19
Figure 3. Busy and chip enable routing for both width and depth expansion with IDT7008 RAMs.
Width Expansion Busy Logic Master/Slave Arrays
When expanding an IDT7008 RAM array in width while using BUSY logic, one master part is used to decide which side of the RAMs array will receive a BUSY indication, and to output that indication. Any number of slaves to be addressed in the same address range as the master, use the BUSY signal as a write inhibit signal. Thus on the IDT7008 RAM the BUSY pin is an output if the part is used as a master (M/S pin = VIH), and the BUSY pin is an input if the part used as a slave (M/S pin = VIL) as shown in Figure 3. If two or more master parts were used when expanding in width, a split decision could result with one master indicating BUSY on one side of the array and another master indicating BUSY on one other side of the array. This would inhibit the write operations from one port for part of a word and inhibit the write operations from the other port for the other part of the word. The BUSY arbitration, on a master, is based on the chip enable and address signals only. It ignores whether an access is a read or write. In a master/slave array, both address and chip enable must be valid long enough for a BUSY flag to be output from the master before the actual write pulse can be initiated with the R/W signal. Failure to observe this timing can
How the Semaphore Flags Work
The semaphore logic is a set of eight latches which are independent of the Dual-Port RAM. These latches can be used to pass a flag, or token, from one port to the other to indicate that a shared resource is in use. The semaphores provide a hardware assist for a use assignment method called "Token Passing Allocation." In this method, the state of a semaphore latch is used as a token indicating that shared resource is in use. If the left processor wants to use this resource, it requests the token by setting the latch. This processor then verifies its success in setting the latch by reading it. If it was successful, it proceeds to assume control over the shared resource. If it was not successful in setting the latch, it determines that the right side processor has set the latch first, has the token and is using the shared resource. The left processor can then either repeatedly request that semaphore's status or remove its request for that semaphore to perform another task and occasionally attempt again to gain control of the token via
17 6.42
IDT7008S/L High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
the set and test sequence. Once the right side has relinquished the token, the left side should succeed in gaining control. The semaphore flags are active LOW. A token is requested by writing a zero into a semaphore latch and is released when the same side writes a one to that latch. The eight semaphore flags reside within the IDT7008 in a separate memory space from the Dual-Port RAM. This address space is accessed by placing a LOW input on the SEM pin (which acts as a chip select for the semaphore flags) and using the other control pins (Address, CE, and R/W) as they would be used in accessing a standard Static RAM. Each of the flags has a unique address which can be accessed by either side through address pins A0 - A2. When accessing the semaphores, none of the other address pins has any effect. When writing to a semaphore, only data pin D0 is used. If a LOW level is written into an unused semaphore location, that flag will be set to a zero on that side and a one on the other side (see Table VI). That semaphore can now only be modified by the side showing the zero. When a one is written into the same location from the same side, the flag will be set to a one for both sides (unless a semaphore request from the other side is pending) and then can be written to by both sides. The fact that the side which is able to write a zero into a semaphore subsequently locks out writes from the other side is what makes semaphore flags useful in interprocessor communications. (A thorough discussion on the use of this feature follows shortly.) A zero written into the same location from the other side will be stored in the semaphore request latch for that side until the semaphore is freed by the first side. When a semaphore flag is read, its value is spread into all data bits so that a flag that is a one reads as a one in all data bits and a flag containing a zero reads as all zeros. The read value is latched into one side's output register when that side's semaphore select (SEM) and output enable (OE) signals go active. This serves to disallow the semaphore from changing state in the middle of a read cycle due to a write cycle from the other side. Because of this latch, a repeated read of a semaphore in a test loop must cause either signal (SEM or OE) to go inactive or the output will never change. A sequence WRITE/READ must be used by the semaphore in order to guarantee that no system level contention will occur. A processor requests access to shared resources by attempting to write a zero into a semaphore location. If the semaphore is already in use, the semaphore request latch will contain a zero, yet the semaphore flag will appear as one, a fact which the processor will verify by the subsequent read (see Table VI). As an example, assume a processor writes a zero to the left port at a free semaphore location. On a subsequent read, the processor will verify that it has written successfully to that location and will assume control over the resource in question. Meanwhile, if a processor on the right side attempts to write a zero to the same semaphore flag it will fail, as will be verified by the fact that a one will be read from that semaphore on the right
side during subsequent read. Had a sequence of READ/WRITE been used instead, system contention problems could have occurred during the gap between the read and write cycles. It is important to note that a failed semaphore request must be followed by either repeated reads or by writing a one into the same location. The reason for this is easily understood by looking at the simple logic diagram of the semaphore flag in Figure 4. Two semaphore request latches feed into a semaphore flag. Whichever latch is first to present a zero to the semaphore flag will force its side of the semaphore flag LOW and the other side HIGH. This condition will continue until a one is written to the same semaphore request latch. Should the other side's semaphore request latch have been written to a zero in the meantime, the semaphore flag will flip
L PORT SEMAPHORE REQUEST FLIP FLOP D0 WRITE SEMAPHORE READ
D Q
R PORT SEMAPHORE REQUEST FLIP FLOP
Q D
D0 WRITE
SEMAPHORE READ
,
3198 drw 20
Figure 4. IDT7008 Semaphore Logic
over to the other side as soon as a one is written into the first side's request latch. The second side's flag will now stay LOW until its semaphore request latch is written to a one. From this it is easy to understand that, if a semaphore is requested and the processor which requested it no longer needs the resource, the entire system can hang up until a one is written into that semaphore request latch. The critical case of semaphore timing is when both sides request a single token by attempting to write a zero into it at the same time. The semaphore logic is specially designed to resolve this problem. If simultaneous requests are made, the logic guarantees that only one side receives the token. If one side is earlier than the other in making the request, the first side to make the request will receive the token. If both requests arrive at the same time, the assignment will be arbitrarily made to one port or the other. One caution that should be noted when using semaphores is that semaphores alone do not guarantee that access to a resource is secure. As with any powerful programming technique, if semaphores are misused or misinterpreted, a software error can easily happen. Initialization of the semaphores is not automatic and must be handled via the initialization program at power-up. Since any semaphore request flag which contains a zero must be reset to a one, all semaphores on both sides should have a one written into them at initialization from both sides to assure that they will be free when needed.
18
IDT7008S/L High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Ordering Information
IDT XXXXX Device Type A Power 999 Speed A Package A Process/ Temperature Range Blank I(1) B PF G J 20 25 35 55 Commercial (0C to +70C) Industrial (-40C to + 85C) Military (-55C to +125C) Compliant to MIL-PRF-38535 QML 100-pin TQFP (PN100-1) 108-pin PGA (G108-1) 84-pin PLCC (J84-1) Commercial Only Commercial & Military Commercial & Military Commercial, Industrial & Military Standard Power Low Power 512K (64K x 8) Dual-Port RAM
3198 drw 21
Speed in nanoseconds
S L 7008
NOTE:
,
1. Industrial temperature range is available on selected TQFP packages in standard power. For other speeds, packages and powers contact your sales office.
Datasheet Document History
1/6/99: Initiated datasheet document history Converted to new format Cosmetic and typographical corrections Pages 2 and 3 Added additional notes to pin configurations Changed drawing format Replaced IDT logo Page 6 Increased storage temperature parameter Clarified TA parameter Page 7 DC Electrical paramters-changed wording from "open" to "disabled" Changed 200mV to 0mV in notes
6/3/99: 11/10/99: 5/8/99:
CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054
for SALES: 800-345-7015 or 408-727-5166 fax: 408-492-8674 www.idt.com
for Tech Support: 831-754-4613 DualPortHelp@idt.com
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
19 6.42

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